Losses Comparison for Inverters with Si and SiC Devices from Pumped Storage Systems

Abstract

The pumped storage is a well-established technology, capable of enhancing the integration of renewable energy sources. The power electronics block is a key component of the pumped storage systems (PSS). It enables the control, and interfaces the PSS with the energy source. The technological progress in manufacturing power devices has led to the development of new devices based on wide band gap materials, such as silicon carbide (SiC). A comparison of the losses on the inverter that controls the PSS is realized in this paper, considering the new SiC and the classic silicon (Si) technology for the power devices in the inverter’s structure. The Simulation platform for Power Electronics Systems (Plecs) is used.